What Is Gallium Nitride?
Gallium nitride (GaN) is a light gray powder known for its application in semiconductor technology.
With the chemical formula GaN, this compound of gallium and nitrogen has a molecular weight of 83.73 and a CAS number of 25617-97-4. It’s recognized as a wide bandgap semiconductor, highlighting its significant energy band gap which is essential for electronic devices.
GaN is primarily used in blue light-emitting diodes (LEDs), power semiconductors, and radar systems, marking it as a next-generation semiconductor material poised to potentially surpass silicon in performance.
Uses of Gallium Nitride
Gallium nitride’s wide bandgap of 3.4 eV, significantly greater than silicon’s 1.1 eV, enables blue LEDs and laser diodes production. Its high saturation drift velocity and breakdown field strength facilitate reduced power loss, lower heat generation, and miniaturization of electronic devices, compared to silicon-based counterparts.
Furthermore, GaN high electron mobility transistors (HEMTs) are increasingly used in 5G communication base stations.
Properties of Gallium Nitride
GaN has a melting point of 800°C, boils over 1,600°C, and has a density of 6.1 g/cm3. It is chemically stable, insoluble in common acids and bases, but soluble in strong alkalis under ultraviolet light exposure.
Its notable properties include:
- Excellent thermal conductivity and heat dissipation
- Capability for high-speed switching and operation at high temperatures
- High saturation electron velocity
- High dielectric breakdown voltage and durability
Structure of Gallium Nitride
GaN has a wurtzite crystal structure with space group P63mc and lattice constants of a=3.19Å and c=5.19Å. It can be doped with silicon (n-type) or magnesium (p-type), although doping alters crystal growth and can induce brittleness due to tensile stress.
Other Information on Gallium Nitride
1. How Gallium Nitride Is Made
Gallium nitride crystals are grown from a Na/Ga melt under high nitrogen pressure or by injecting ammonia gas into molten gallium. High-quality GaN, crucial for blue/UV-LEDs and p-type GaN discovery, results from low-temperature buffer layer deposition.
2Ga + 2NH3 → 2GaN + 3H2
Ga2O3 + 2NH3 → 2GaN + 3H2O
2. Legal Information
Gallium nitride should be handled carefully due to its potential irritant effects on the skin, eyes, and lungs.
3. Handling and Storage Precautions
To ensure safety:
- Store in a tightly sealed container, away from moisture, in a cool, dark place.
- Handle only in well-ventilated areas or outdoors.
- Avoid creating dust and contact with strong oxidizers.
- Wear appropriate protective gear, including gloves, eyewear, and masks.
- Ensure thorough washing after handling, and immediate flushing with water upon skin or eye contact.