What Is an Insulated Gate Bipolar Transistor?
An insulated gate bipolar transistor (IGBT) is a power semiconductor designed for high-voltage and high-current applications, such as switching operations. It merges the advantages of MOSFETs (for high-speed switching) and bipolar transistors (for handling high power).
IGBTs use a MOSFET gate to control the current flow, effectively modulating the current between the N-type collector and P-type base in response to input signals. This principle enables precise control over power applications.
Widely employed in motor control systems, power conversion (e.g., in solar power and railway vehicles), and hybrid vehicle drivetrains, IGBTs excel in environments requiring robustness against high voltages and currents, coupled with the need for high-speed switching. They offer improved performance over traditional bipolar transistors, making them indispensable in modern power electronics.