What Is a High Electron Mobility Transistor?
A high electron mobility transistor (HEMT) is a specialized field-effect transistor (FET) that leverages compound semiconductors like GaAs for operation. It is renowned for its capability to function efficiently at high speeds and frequencies, surpassing traditional silicon transistors.
The core of HEMT technology lies in its use of a heterojunction to create a two-dimensional electron gas (2DEG) with exceptionally high electron mobility. This feature allows for effective control over the 2DEG current via gate voltage adjustments, facilitating enhanced transistor performance.
HEMTs are extensively used as high-frequency amplifiers in various applications, including mobile phones, satellite communications, radar systems, medical devices, and measurement equipment. They are distinguished by their high speed, frequency capabilities, low power consumption, and heightened sensitivity.