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Inductive proximity Sensor

What Is an Inductive Proximity Sensor?

An inductive proximity sensor utilizes magnetic force to activate switches without physical contact with the object being detected. This technology enables precise detection while maintaining the sensor’s integrity.

Key types include reed switches, hall elements, and magnetoresistive element-based methods. These sensors are characterized by non-contact detection, adjustable detection distances, no mutual interference, durability, and compact size. Their design allows operation in challenging environments like dust, heat, and vibration. Notably, they can detect through non-ferromagnetic materials like wood and plastic.

Uses of Inductive Proximity Sensors

Inductive proximity sensors are vital in automating doors, windows, and security systems. They detect the movement of these structures, ensuring efficient operation.

In industrial settings, magnetic proximity sensors are integral in machinery for tasks like position detection on assembly lines, inventory management in automated warehouses, precision in industrial sewing machines, and cassette positioning in copiers.

Recently, they have been instrumental in guiding Automated Guided Vehicles (AGVs) by tracking magnets installed on factory floors.

Principles of Inductive Proximity Sensors

Inductive proximity sensors function primarily through reed switches, Hall elements, and magnetoresistive methods, each explained below:

  • Reed Switch
    Reed switches are magnetically operated. They toggle their contacts upon exposure to a magnetic field from a magnet or similar source.
  • Hall Element
    Hall elements utilize the Hall effect, where a perpendicular magnetic field to a current in a material generates a voltage. They detect closed contacts under strong magnetic flux and open contacts as the magnet recedes, reducing flux density.
  • Magnetoresistive Elements
    Magnetoresistive elements change their electrical resistance when exposed to magnetism. This property is used to open or close the device. There are four main types:
    ・Semiconductor magnetoresistive elements
    ・Anisotropic magnetoresistive elements
    ・Giant magnetoresistive elements
    ・Tunnel magnetoresistive elements

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